Slanted reflection gratings on gallium arsenide

In this paper we present the first experimental study of the behavior of a slanted reflector array on {100}-cut, <110>-propagating GaAs. The thorough examination of both Al stripes and grooves on GaAs unveiled previously unknown information about the behavior of slanted gratings on (100)-cut GaAs. We discovered that etched grooves provide a strong reflection coefficient (C=0.29) while Al stripes do not (C=0.014). These data measurements of the reflection characteristics for slanted gratings on GaAs. Potential device applications include an ultra-low power ACT device which does not require an IDT.