Evaluation of electrostatic discharge (ESD) characteristics for bottom contact organic thin film transistor

Electrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT) is investigated experimentally for the first time using the transmission line pulsing technique. The failure currents and leakage currents of OTFTs having different channel lengths and finger structures are characterized. Physical insights and measured data are offered to explain the failure of these devices at relatively low ESD stress level.