Fabrication and characterization of a silicon nanofin non-volatile memory

This paper reports the fabrication and characterization of a bi-stable non-volatile device based on nanoelectromechanical system. The device consists of a silicon nanofin (SiNF) of 2, 8, 12 μm length by 90 nm thick which can be switched bi-directionally and achieve two stable geometrical position. After switching, the hysteresis behavior is realized through the nature van der Waals force that holds the SiNF to the surface of the contact terminal. Measurement results show bi-stable hysteresis behavior with pull-in voltage, V_PI at 10V and reset voltage, V_RESET at -12V. The measured voltage drift of this device is 24mV/°C from 50°C to 150°C.