A monolithic multi-finger nanodiamond lateral vacuum microtriode

This article reports a vacuum multi-finger monolithic microtriode utilizing nanodiamond as the emitting material. The structure is comprised of 140-fingerlike nanodiamond emitters with built-in nanodiamond gate and Si anode. A mixed lithography patterning approach is used to fabricate the three-terminal device structure. Triode characteristics, demonstrating gate controlled emission current modulation at low operating gate and anode voltages, are obtained. The realization of the efficient monolithic microtriode allows further development of robust vacuum integrated circuit for application in high temperature and radiation harsh environments.