MBE synthesis of InAs/GaAs quantum dots and their characterisation

In this paper we present the details of the growth of InAs quantum dots synthesized on GaAs substrates using a Solid-Source Molecular Beam Epitaxy (SS-MBE) system. The grown structures were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and low temperature photoluminescence spectrum (LT-PL).By theselection of growth parameters, InAs quantum dots (QDs) were synthesised. A buffer layer of thickness of 250nm was grown on an n+-GaAs(001) substrate. The 2D to 3D transaction of the QDs was monitored with the help of reflection high energy electron diffraction (RHEED).