The transient behavior of transistors due to ionized radiation pulses

The detailed mechanism of secondary photocurrent generation in transistors due to short pulses of ionizing radiation is discussed quantitatively, and the results of 0.2-μsec (microsecond) flash X-ray experiments are explained. The dependences of the transient current pulse on transistor types, radiation dose, initial bias level, and external circuit impedance are presented. A possible equivalent circuit controlled by stored base charges is developed which makes it possible to predict more accurately the transient responses of many transistor circuits.