Investigation of the low field leakage current mechanism in polysilicon TFT's

Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistors (TFT's), we propose a low field leakage current mechanism which explains to a good degree of accuracy at a low drain to source voltage (V/sub DS/) the dependence of the leakage current on the device's active layer thickness, density-of-states (DOS), bias-stress degradation and active layer length.