Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate

Post-treatment of replacement metal gate is investigated for the device performance improvement of high-${k}$ last p-type bulk FinFET using post-deposition annealing (PDA) and ${\rm SF}_{6}$ plasma treatment. Compared with untreated ${\rm HfO}_{2}$ reference, post-high- ${k}$ deposition PDA and ${\rm SF}_{6}$ plasma-treated devices show improved driving current and hole mobility. With the carrier number fluctuations with correlated mobility fluctuation model, ${\sim}{\rm 3}~{\rm times}$ lower input gate referred noise is observed in PDA and ${\rm SF}_{6}$ plasma-treated devices compared with untreated FinFETs. Post-treatments suppress the trap density of high-${k}$ last FinFET. PDA reduces oxide bulk trap whereas ${\rm SF}_{6}$ plasma affects both interface and oxide bulk trap.