Switching Field Variation in MgO Magnetic Tunnel Junction Nanopillars: Experimental Results and Micromagnetic Simulations

The switching field dependence on the size of nanometric magnetic tunnel junctions was studied. CoFe/Ru/CoFeB/MgO/CoFeB nano-pillars were fabricated down to 150
$\,\times\,$
300 nm
$^{2}$
and characterized, revealing a squared transfer curve with a sharp transition between magnetic states. A micromagnetic finite element tool was then used to simulate the magnetic behavior of the studied nanopillar. The simulations indicated a single-domain like state at remanence, also displaying a sharp transition between parallel/antiparallel free-layer configurations. Overall, the experimentally measured switching fields
$({\rm H}_{\rm sw})$
were smaller than those obtained from simulations. Such trend was consistent with the presence of a particular free layer profile, signature of the two angle etching step used for pillar definition. Further decrease of experimental
${\rm H}_{\rm sw}$
was attributed to local defects and thermal activated processes. This study was able to validate this particular simulation tool for the control of the nanofabrication process.