Intrinsic admittance parameter for separate gate InA1As/InGaAs DG-HEMT for 100 nm gate length

An analytical model for 3-port short circuit admittance parameter (Y-parameter) for separate gate InA1As/InGaAs/InP Double Gate High Electron Mobility Transistor (DG-HEMT) is presented in this paper. These admittance parameters are obtained in term of real and imaginary part from the 3-port equivalent circuit of the DG-HEMT and the effect of two gate voltage on the cut-off frequency of the DG-HEMT is studied. The analytical result obtained are compared with Atlas Silvaco Device simulator and found in a good agreement, thus validating the model