State-of-the-art performance of InP-based MMICs

This paper presents results of InP-based monolithic millimeter-wave circuits developed using the most advanced InP-based HEMT and HBT MMIC technologies. For HEMT MMICs, a 155 GHz low noise amplifier (LNA) has demonstrated decent gain performance, while a 94 GHz power amplifier (PA) has achieved the best output power at this frequency. For HBT MMIC technology, a 94 GHz fundamental mode VCO has been fabricated and tested. Moreover, we have successfully integrated the HEMT and HBT devices on the same InP substrate and demonstrated a 24-GHz frequency source consisting an HBT VCO and a HEMT buffer amplifier on a single chip. These results represent state-of-the-art development status of InP-based MMICs.