Power supply clamp for multi-domain mixed-signal SiGe BiCMOS applications

An active power supply clamp for precision high speed SiGe BiCMOS applications is introduced. The clamp architecture includes functional blocks for transient stress detection, stress-adapted activation feedback and mistriggering control. Electrostatic discharge (ESD) robustness is demonstrated in high speed/high voltage BiCMOS SiGe applications operating at supply voltages beyond the breakdown voltage constraint in the bipolar signal processing blocks during ESD stress.