Resistance electric filed dependence simulation of piezoresistive silicon pressure sensor and improvement by shield layer

This paper models two structures for simulating the resistance electric field dependence of piezoresistor in silicon pressure sensor. The difference of the two structures is one with a shield layer and the other one without it. The simulation results show that the shield layer can shield the electric field no matter where it origins externally or it is caused by fixed oxide charges, which is very useful to improve the stability of the piezoresistor.