Short-circuit tests on SiC power MOSFETs

This paper presents experimental results and a related discussion for the behavior under short-circuit conditions of novel 1200V silicon-carbide (SiC) power MOSFETs. The study is based on commercially available devices and delivers important insights into specific device features which have no counterpart in high voltage silicon (Si) transistors. The main aim is to provide indications for reliable power system development and inform the progression of device design in a broad application scenario and device types (e.g., implementation of SiC based solid-state current limiters/regulators; development of SiC Smart Power technology).