A numerical study of the RESURF effect in bulk and SOI power devices

A numerical study of the two-dimensional distribution of the electric field in Junction Isolated (JI), Silicon on Insulator (SOI) and partial SOI power devices has been performed. The partial SOI lateral power devices, earlier proposed by us, overcome the breakdown problems associated with conventional SOI power devices, while still maintaining a high speed and low electrical interference with associated low voltage CMOS circuitry.