An investigation of the I-V relationship of double barrier resonant tunneling diodes in oscillating conditions

The measured I-V characteristics of the double barrier resonant tunneling (DBRT) diode is distorted in the negative differential conductance region if the device is unstable. This paper presents a study of the I-V curve of the DBRT diode in oscillating conditions. This task is fulfilled using an accurate large signal model and PSPICE simulations. First, the PSPICE DBRT diode model is presented. Then the circuit model used for nonlinear simulations is described. Based on the simulation results, concluding remarks with regards to DBRT diode behavior are derived.