Millimeter-wave and noise properties of Si∼Si1−xGex heterojunction double-drift region MITATT devices at 94 GHz

The authors have made an attempt to study the millimeter-wave properties and noise performance of Si~Si
_1-x
Ge
_x
anisotype heterojunction Double-Drift Region (DDR) Mixed Tunneling Avalanche Transit Time (MITATT) devices operating at 94 GHz. A computer simulation technique based on driftdiffusion model is used for the present study. Two different mole fractions, x = 0.1 and x = 0.3 of Ge and four types of device structure are considered for the simulation. The results show that the n-Si
_0.7
Ge
_0.3
~p-Si heterojunction DDR structure of MITATT device excels all other structures as regards DC to RF conversion efficiency (20.15%), CW power output (773.29 mW) and noise measure (33.09 dB).