Multi-generation device fabrication by ArF lithography

Summary form only given. Although ArF excimer laser lithography is expected to attain the highest resolution possible in optical lithography, its application to 0.13-/spl mu/m devices has not been adequately demonstrated. In next generation sub-0.10 /spl mu/m devices, it is believed that the mix and match process is indispensable with optical lithography and other types of lithography. One reason is the difficulty of fabricating contact holes with a larger process margin. Here, we demonstrate that it is possible to make 0.13-/spl mu/m patterns using a single layer resist in combination with resolution enhancement techniques, and to make sub-0.10 /spl mu/m contact holes using the Top Surface Imaging (TSI) process.