Modelling semiconductor devices using bond graph techniques

Device simulators in electronics, use equivalent circuits, ideal switches and semiconductor equation models. Simulation of power electronic devices is less developed than that of other electronic fields. The main modelling methods are the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy in switching mode. The authors propose the application of the bond graph techniques to model modular power semiconductor devices. This method makes for easy model construction and numerical resolution. They present in this paper the principle of proposed method and the results of its application to the example of IGBT devices. Bond graphs has been used in modelling a wide variety of physical systems. Future application can be in mechatronics which associate electrical and mechanical systems.