Ultra-thin silicon strip detectors for hadrontherapy beam monitoring

We present a new generation of ultra-thin detectors for hadrontherapy beam monitoring. Ultra-low thicknesses reachable thanks to thick-SOI wafers enable a very low beam scattering degradation and provide very good electrical characteristics for both 20 and 10μm thicknesses: very high signal-to-dark current ratio, weak bulk-to-strip and dark current variability, very high interstrip resistance and a considerable charge collection efficiency at null bias.