Analysis of dopant diffusion and defects in SiGe-channel Implant Free Quantum Well (IFQW) devices using an atomistic kinetic Monte Carlo approach

An analysis of dopant diffusion and defects in SiGe-channel (SiGe-ch) Implant-Free Quantum Well (IFQW) using an atomistic KMC approach are shown. B-doped SiGe layer is used for S/D-extension formation. KMC and SSRM show that B migration from B-doped SiGe raised-S/D can form S/D-extension gate overlap. Arsenic Vt-adjustment implant before SiGe-ch formation instead of Arsenic pocket implant after SiGe-ch formation can reduce Arsenic concentration in channel region and shows better Vt-mismatch.