A novel approach to high current hermetic packaging

This paper presents research in the design and construction of high current hermetic modules. This construction uses thick copper metallization such as direct bonded copper (DEC) or active brazed copper to alumina or aluminum nitride to create a package which passes leak rate tests of less than 1/spl times/10/sup -7/. The principle features of these style packages are pure copper paths between the silicon devices and the terminals, and terminals of virtually unlimited size. Several current projects and applications of this technology are also discussed.