Fabrication and characterization of 3D micro-plasma field effect transistors

We report the design, fabrication and electrical characterization of novel three dimensional Micro-plasma Field Effect Transistor (MOPFET) devices that operate inside atmospheric RF helium plasma. Current versus voltage characterization of MOPFETs are demonstrated in this paper. High transconductance and reliable gate control over I_ds can be obtained from coplanar and 3D MOPFETs. COMSOL simulation is used here to demonstrate the operation principles of MOPFETs. For micro-plasma FETs electrons and ions act as charge carriers to conduct current, instead of electrons and holes, as in, traditional semiconductor FETs. Therefore, MOPFETs have advantages over semiconductor FETs in extreme conditions, such as at high temperatures and in high ionizing radiation such as applications in space exploration and in distressed nuclear reactors.