Shell formation in InGaAs nanowires driven by lattice latching and polarity effect

A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <;112>_A directions, while three In-rich zones are formed along <;112>_B directions in the truncated-triangular shells. The polarity-driven lattice latching effect is accounted for this compositional inhomogeneity found in the shell.