Analytical modelling of an asymmetric pocket implanted n-channel MOSFETs

Analytical model for surface potential of a pocket implanted asymmetric n-channel MOSFET device has been derived upon solving one dimensional Poisson's equation. The continuity of potential and electric field in lateral direction is satisfied and appropriate boundary conditions are used while deriving the model. The dependence of the surface potential on different device parameters and biasing conditions has also been studied. The result of the proposed model is compared with the data available in the literature and good agreement was obtained.