Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field

A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In_0.37Ga_0.63As_0.975N_0.025 compressive strain quantum well with tensile strained 200 Å GaAs_0.997N_0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm^-1 to 865 cm^-1 for carrier concentration of 8×10¹⁸ cm^-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm^-1.