High-performance AlN/GaN MOSHEMTs with regrown ohmic contacts by MOCVD

High-performance AlN/GaN metal-oxide-semiconductor heterojunction field-effect transistors (MOSHEMTs) have been fabricated with source/drain (S/D) regrowth technology by metal-organic chemical vapor deposition (MOCVD). The gate and S/D metallization were produced simultaneously employing Ti/Al/Ni/Au. Low S/D contact resistance of 0.33 Ω·mm and interface resistance less than 0.07 Ω·mm were extracted. The fabricated 550-nm gate-length device exhibits a maximum transcondutance (G_m) of 542 mS/mm and maximum drain current (I_d) of 1120 mA/mm with an on/off state current ratio up to 10⁶.