Variability in scaled MOSFETs: Measurements, analysis, and suppression

The recent research activities on random variability in scaled bulk MOSFETs are described. Using a special test-element-group (TEG), threshold voltage (V_TH) variability of as many as 10 billion transistors have been measured for the first time. For the suppression of variability, a novel self-suppression method of random variability in SRAM cells is proposed and demonstrated.