Device modeling and optimization of high- performance thin film CIGS solar cell with MgxZn1−xO buffer layer

A comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters of 1.2V for open circuit voltage (V_oc), 34.8 mA/cm² of short circuit current density (J_sc) and a fill factor of 85.7%. Different aspects of constituent layer parameters thickness, doping, and alloy composition calibrations has been considered to identify the optimization criteria for the design of CIGS based solar cell.