Long-wavelength GaInNAs epitaxial growth and its application for 1.3 /spl mu/m laser diodes

In conclusion we have achieved the growth of a GalnNAs lattice matched to GaAs by MOCVD using DMHy as a nitrogen source. Also using a GaInNAs lattice matched to GaAs, we have succeeded in obtaining the room-temperature pulsed operation of GaInNAs-GaAs laser diode at a wavelength of 1.3 /spl mu/m. The MOCVD method using DMHy as a nitrogen source is promising for the growth of GaInNAs for 1.3 /spl mu/m range laser diodes.