Wafer bonding technology for optoelectronic integration

Integration of III-V optical devices on Si is an essential technology to realize optoelectronic VLSIs. We have been investigating wafer bonding as a key technology to integrate InGaAsP/InP lasers on Si and fabricated edge-emitting and surface-emitting lasers on Si. In this report, we review the bonding technology and discuss the laser fabrication and characteristics.