Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors

This work presents electrical and optical properties of Schottky barrier photodetectors containing the triple quantum well (MQW) InGaAsN/GaAs structures grown by atmospheric pressure metal organic vapour phase epitaxy. The peaks corresponding to optical transitions in MQW were identified by photocurrent spectroscopy and compared with simulations. The measurements revealed that there are two embedded and overlapped QW which can be simulated as In_xGa_1-xAs_1-yN_y/GaAs QW and In_xGa_1-xAs/GaAs QW with appropriate width and composition. This effect can be assigned to the interdiffusion between QW and GaAs during the structure growth. The low temperature spectral measurements revealed the shift and intensity of optical transitions in particular QWs.