Selective-area growth InP-based nanowires and their optical properties

I describe our study on the growth of InP-based nanowires (NW) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) and their optical properties. Vertically-aligned InP NWs were grown on InP (111)A oriented substrates, and they exhibited transition of crystal structures depending on the growth conditions. Laterally or vertically heterostructured NWs were also grown by SA-MOVPE based on InP NWs, and their optical properties were studied by using μ-PL measurement. InP NWs with a vertical pn-junction were also grown and was applied to NW light-emitting diodes (LEDs).