Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond

A similar nano-transistor, previously proposed in silicon, is now simulated in diamond. The transfer characteristics were poorly investigated, but they prove the main distinctive feature of this nano-transistor versus the lateral field emission devices - the transconductance sensitivity. In this paper, the Nothing On Insulator - NOI transistor offers superior performances. The optimum simulated device has a Diamond On Oxide solid structure with 2nm cavity, which offers a maximum drain current of 8.9nA, a transconductance of 2.4nA/V and leakage currents under 1pA.