Low leakage nanoscaled Body on Insulator FinFET with underlap and high k dielectric

In this paper Body over Insulator (BOI) FinFET structure where the channel region is insulated from body by buried oxide and with underlap is studied. An extensive simulation study and analysis of the effect of underlap with SiO
₂
and Si
₃
N
₄
dielectrics on BOI FinFET has been performed using the TCAD SILVACO (DevEDIT 3D,ATLAS). The simulation results has revealed that BOI FinFET with underlap and high k dielectric reduces DIBL, leakage current (I
_OFF
) and improves I
_ON
/I
_OFF
ratio.