Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

In this work Al_xIn_1-xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10^-6 C/cm²) to (-5.25×10^-6 C/cm²). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10^-6 C/cm²) to (10.85×10^-6 C/cm²). The calculated sheet carrier concentration is 6.3×10¹², 1.73, 2.88 and 4.08×10¹³cm^-2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.