Infrared imaging and backside failure analysis techniques on multilayer CMOS technology

Infrared (IR) laser scanning microscopy (LSM) techniques have been characterized and developed to provide better root cause backside failure analysis (BFA) on products fabricated on multilayer CMOS technology. Spectral transmission studies, backside substrate thinning techniques, and examples of backside IR LSM fault isolation techniques applied on high performance microprocessors will be presented in this paper.