Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.