Monte Carlo simulation of multilevel switching in hybrid CMOS/memristive nanoelectronic circuits

Conductance variations in nanoelectronic resistive switches seriously affect the performance of hybrid CMOS/memristive circuits. In order to capture cycle-to-cycle variability by circuit simulation a standard model was extended for resistive switches based on the electrochemical metallization effect. The extension incorporates an additional process that simulates the randomness of the filament growth and is prepared to be executable on standard circuit simulation platforms. The results show that the randomness of filament growth significantly affects the conductance variations and needs to be considered for circuit simulation of scaled devices.