Characterization of interface traps in SOI material

In SOI material, the presence of interface traps at the buried oxide layer interfaces has been demonstrated from electrical data. More recently, interface defects were identified at the buried oxide interfaces in SOI material. In this study we use heat treatment under high-vacuum (instead of an inert ambient such as Ar) as a tool to enhance the buried interface trap density in the SOI material. The results provide new insights into the microscopic, chemical, and electrical signature of these interface traps in SOI.