A high density circular-shape SOI iMEMS with intelligent pressure sensor

This paper presents an SOI iMEMS intelligent pressure sensor operation on a circular-shape diaphragm and its design which involves determining the target position for placing the transducer on the diaphragm through stress analyses based on various dimensional SOI structures along with a bulk Si one, including thermal residual stresses. Further, it proposes a way of integrating the sensor macros with a microprocessor as a monolithic chip solution. Piezoresistance in silicon is changed by conductivity of a material in response to an applied stresses on various structures at maximum stress point at various pressures. Based on transducer analysis, the sensitivity parameters for the transducer operation and their limiting factors are concisely summarized, where simulated results for the normal and shear stresses with piezoresistance coefficients are given.