Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

Threshold voltage
$(V_{\rm th})$
and drain-source current
$(I_{\rm DS})$
behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions.
$V_{\rm th}$
loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of
$I_{\rm DS}$
with the total irradiation dose. A brief physical explanation is also provided.