2.0–6.0 GHz GaAs MMIC amplifier

The paper presents the results of designing microwave monolithic integrated circuit of two-stage amplifier produced on pHEMT substrate with chip size 2.4×1.6 mm² and providing 16.5 dB conversion gain and 15 dBm P1dB on 2.0–6.0 GHz. The method of MMIC multistage amplifier designing is developed. FET topology has been optimized for minimization of parasitic parameters and maximization of dynamic range. GaAs pHEMT MMIC two-stage amplifiers are developed and manufactured by using MESFET with 0.7 μm gate's length as an active element. Characteristics of the device are investigated experimentally in 2.0–6.0 GHz frequency range. Results of measurements are agreed with calculation data and confirm effectiveness of the developed method of designing.