The need for transient I-V measurement of device ESD response

Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.