Analysis of a serial circuit with two memristors and voltage source at sine and impulse regime

In the present paper the structure and principle of action of Williams's memristor are described. There are presented its basic parameters and the basic physical dependencies are confirmed. The analysis described here considers linear drift model of Williams's memristor. A SIMULINK model of circuit with two memristors is build with obtained formulae and Kirchhoff's voltage law. The basic results by the simulations organized in MATLAB and SIMULINK environment are given in graphical form. These results are associated with distortions of plateaus of impulses at different ratios between resistances of “opened” and “closed” states of Williams's memristor — ROFF and RON. There are given also interpreting of results, which confirms that a memristor with high ratio r is better than a memristor with small value of r. In conclusion there are given basic deductions and perspectives for future applications of memristor circuits.