Abstract:
We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor cros...Show MoreMetadata
Abstract:
We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.
Published in: 2012 13th International Workshop on Cellular Nanoscale Networks and their Applications
Date of Conference: 29-31 August 2012
Date Added to IEEE Xplore: 18 October 2012
ISBN Information:
Contents 