Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's

Hot-carrier degradation in n- and p-MOSFET's is investigated using the forward gated-diode drain current and charge pumping current measurements. A linear relation is experimentally found between the maximum forward gated diode current I/sub df/ and the corresponding maximum charge pumping current I/sub cp/ in the devices after hot-carrier stress. A close correspondence between the two currents is demonstrated.