ZnO based charge trapping memory with embedded nanoparticles

A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a ∼6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied.