Fabrication of small CNT emitters for high resolution X-ray source

We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10^-2 cm² with current density over 500 mA/cm². However, with small area (200 × 500 μm² elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm² and 8 mA emission current.