Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films

This work reported the changes in the carrier concentration of a-GaAs_1-xN_x thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.